N-Channel MOSFET, 180 A, 80 V, 7-Pin D2PAK Infineon IPB019N08N3 G

Κωδικός Προϊόντος της RS: 898-7003PΚατασκευαστής: InfineonΚωδικός Κατασκευαστή: IPB019N08N3 G
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

80 V

Package Type

TO-263

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

3.3 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.31mm

Typical Gate Charge @ Vgs

155 nC @ 10 V

Width

9.45mm

Transistor Material

Si

Series

OptiMOS 3

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

4.57mm

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Infineon OptiMOS™ 3 N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK-7 IPB025N10N3GATMA1
€ 7,42Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

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N-Channel MOSFET, 180 A, 80 V, 7-Pin D2PAK Infineon IPB019N08N3 G
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Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

N-Channel MOSFET, 180 A, 80 V, 7-Pin D2PAK Infineon IPB019N08N3 G

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Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
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Μπορεί να σας ενδιαφέρει
Infineon OptiMOS™ 3 N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK-7 IPB025N10N3GATMA1
€ 7,42Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

80 V

Package Type

TO-263

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

3.3 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.31mm

Typical Gate Charge @ Vgs

155 nC @ 10 V

Width

9.45mm

Transistor Material

Si

Series

OptiMOS 3

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

4.57mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
Infineon OptiMOS™ 3 N-Channel MOSFET, 180 A, 100 V, 7-Pin D2PAK-7 IPB025N10N3GATMA1
€ 7,42Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α