Infineon CoolMOS CP N-Channel MOSFET, 31 A, 650 V, 3-Pin D2PAK IPB60R099CPATMA1

Κωδικός Προϊόντος της RS: 753-2999PΚατασκευαστής: InfineonΚωδικός Κατασκευαστή: IPB60R099CPATMA1
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS CP

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

99 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

255 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

60 nC @ 10 V

Width

9.45mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.31mm

Height

4.57mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

Infineon CoolMOS™CP Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

Infineon CoolMOS CP N-Channel MOSFET, 31 A, 650 V, 3-Pin D2PAK IPB60R099CPATMA1
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P.O.A.

Infineon CoolMOS CP N-Channel MOSFET, 31 A, 650 V, 3-Pin D2PAK IPB60R099CPATMA1

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Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS CP

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

99 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

255 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

60 nC @ 10 V

Width

9.45mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.31mm

Height

4.57mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

Infineon CoolMOS™CP Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more