Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
150 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Length
10.36mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
9.45mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
4.57mm
Series
IPD200N15N3 G
Minimum Operating Temperature
-55 °C
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 3,08
Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α
€ 3,819
Μονάδας (Σε ένα πακέτο των 10) (Including VAT) Με Φ.Π.Α
10
€ 3,08
Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α
€ 3,819
Μονάδας (Σε ένα πακέτο των 10) (Including VAT) Με Φ.Π.Α
10
Αγοράστε μαζικά
Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
---|---|---|
10 - 10 | € 3,08 | € 30,80 |
20 - 40 | € 2,50 | € 25,00 |
50 - 90 | € 2,37 | € 23,70 |
100 - 240 | € 2,24 | € 22,40 |
250+ | € 2,12 | € 21,20 |
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
150 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Length
10.36mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
9.45mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
4.57mm
Series
IPD200N15N3 G
Minimum Operating Temperature
-55 °C