N-Channel MOSFET, 50 A, 150 V, 3-Pin DPAK Infineon IPD200N15N3GATMA1

Κωδικός Προϊόντος της RS: 170-2287Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: IPD200N15N3GATMA1
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

150 V

Series

IPD200N15N3 G

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

9.45mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.36mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Height

4.57mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 2,17

Μονάδας (Σε ένα καρούλι των 2500) (Exc. Vat)Χωρίς Φ.Π.Α

€ 2,691

Μονάδας (Σε ένα καρούλι των 2500) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 50 A, 150 V, 3-Pin DPAK Infineon IPD200N15N3GATMA1

€ 2,17

Μονάδας (Σε ένα καρούλι των 2500) (Exc. Vat)Χωρίς Φ.Π.Α

€ 2,691

Μονάδας (Σε ένα καρούλι των 2500) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 50 A, 150 V, 3-Pin DPAK Infineon IPD200N15N3GATMA1
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

150 V

Series

IPD200N15N3 G

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

9.45mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.36mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Height

4.57mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more