N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK Infineon IPD25CN10NGATMA1

Κωδικός Προϊόντος της RS: 171-1917Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: IPD25CN10NGATMA1
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

100 V

Series

IPD25CN10N G

Package Type

TO-252

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

26 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

71 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Width

7.47mm

Number of Elements per Chip

1

Height

2.41mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 1,44

Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1,786

Μονάδας (Σε ένα πακέτο των 10) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK Infineon IPD25CN10NGATMA1
Επιλέγξτε συσκευασία

€ 1,44

Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1,786

Μονάδας (Σε ένα πακέτο των 10) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 35 A, 100 V, 3-Pin DPAK Infineon IPD25CN10NGATMA1
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Αγοράστε μαζικά

Quantity ΠοσότηταΤιμή μονάδαςPer Πακέτο
10 - 90€ 1,44€ 14,40
100 - 240€ 1,13€ 11,30
250 - 490€ 1,08€ 10,80
500 - 990€ 1,01€ 10,10
1000+€ 0,96€ 9,60

Ideate. Create. Collaborate

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No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

100 V

Series

IPD25CN10N G

Package Type

TO-252

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

26 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

71 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Width

7.47mm

Number of Elements per Chip

1

Height

2.41mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more