Infineon OptiMOS™-T N-Channel MOSFET, 30 A, 100 V, 3-Pin DPAK IPD30N10S3L34ATMA1

Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Series
OptiMOS™-T
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
42 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
24 nC @ 10 V
Width
6.22mm
Height
2.3mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
Infineon OptiMOS™T Power MOSFETs
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 12,30
€ 1,23 Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α
€ 15,25
€ 1,525 Μονάδας (Σε ένα πακέτο των 10) Με Φ.Π.Α
Standard
10
€ 12,30
€ 1,23 Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α
€ 15,25
€ 1,525 Μονάδας (Σε ένα πακέτο των 10) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Standard
10
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
| Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
|---|---|---|
| 10 - 20 | € 1,23 | € 12,30 |
| 30 - 120 | € 0,97 | € 9,70 |
| 130 - 620 | € 0,78 | € 7,80 |
| 630 - 1240 | € 0,78 | € 7,80 |
| 1250+ | € 0,78 | € 7,80 |
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Series
OptiMOS™-T
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
42 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
24 nC @ 10 V
Width
6.22mm
Height
2.3mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
Infineon OptiMOS™T Power MOSFETs
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

