Infineon OptiMOS™ Silicon N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK IPD50N06S4L08ATMA2
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0078 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Number of Elements per Chip
1
Transistor Material
Silicon
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€ 1.750,00
€ 0,70 Μονάδας (Σε ένα καρούλι των 2500) (Exc. Vat)Χωρίς Φ.Π.Α
€ 2.170,00
€ 0,868 Μονάδας (Σε ένα καρούλι των 2500) Με Φ.Π.Α
2500
€ 1.750,00
€ 0,70 Μονάδας (Σε ένα καρούλι των 2500) (Exc. Vat)Χωρίς Φ.Π.Α
€ 2.170,00
€ 0,868 Μονάδας (Σε ένα καρούλι των 2500) Με Φ.Π.Α
2500
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Ideate. Create. Collaborate
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0078 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Number of Elements per Chip
1
Transistor Material
Silicon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products