Infineon OptiMOS™ Silicon N-Channel MOSFET, 60 A, 100 V, 3-Pin DPAK IPD60N10S4L12ATMA1
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
100 V
Series
OptiMOS™
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.012 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Transistor Material
Silicon
Number of Elements per Chip
1
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P.O.A.
Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α
Συσκευασία Παραγωγής (Καρούλι)
10
P.O.A.
Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Συσκευασία Παραγωγής (Καρούλι)
10
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
100 V
Series
OptiMOS™
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.012 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Transistor Material
Silicon
Number of Elements per Chip
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products