N-Channel MOSFET, 1.9 A, 800 V, 3-Pin DPAK Infineon IPD80R3K3P7ATMA1
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
800 V
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.3 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Number of Elements per Chip
1
Transistor Material
Si
Series
CoolMOS P7
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Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 0,45
Μονάδας (Σε ένα καρούλι των 2500) (Exc. Vat)Χωρίς Φ.Π.Α
€ 0,558
Μονάδας (Σε ένα καρούλι των 2500) (Including VAT) Με Φ.Π.Α
2500
€ 0,45
Μονάδας (Σε ένα καρούλι των 2500) (Exc. Vat)Χωρίς Φ.Π.Α
€ 0,558
Μονάδας (Σε ένα καρούλι των 2500) (Including VAT) Με Φ.Π.Α
2500
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
800 V
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.3 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Number of Elements per Chip
1
Transistor Material
Si
Series
CoolMOS P7
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products