Infineon Dual SiC N-Channel MOSFET, 302 A, 40 V, 7-Pin PG-TO263-7 IPF009N04NF2SATMA1
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
302 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO263-7
Mounting Type
Surface Mount
Pin Count
7
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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€ 2.008,00
€ 2,51 Μονάδας (Σε ένα καρούλι των 800) (Exc. Vat)Χωρίς Φ.Π.Α
€ 2.489,92
€ 3,112 Μονάδας (Σε ένα καρούλι των 800) Με Φ.Π.Α
800
€ 2.008,00
€ 2,51 Μονάδας (Σε ένα καρούλι των 800) (Exc. Vat)Χωρίς Φ.Π.Α
€ 2.489,92
€ 3,112 Μονάδας (Σε ένα καρούλι των 800) Με Φ.Π.Α
800
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Ideate. Create. Collaborate
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- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
302 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO263-7
Mounting Type
Surface Mount
Pin Count
7
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products