Dual N-Channel MOSFET, 16 A, 100 V, 8-Pin SuperSO8 5 x 6 Dual Infineon IPG16N10S461AATMA1
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
100 V
Package Type
SuperSO8 5 x 6 Dual
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.061 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Transistor Material
Si
Number of Elements per Chip
2
Series
OptiMOS-T2
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€ 0,78
Μονάδας (Σε ένα καρούλι των 5000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 0,967
Μονάδας (Σε ένα καρούλι των 5000) (Including VAT) Με Φ.Π.Α
5000
€ 0,78
Μονάδας (Σε ένα καρούλι των 5000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 0,967
Μονάδας (Σε ένα καρούλι των 5000) (Including VAT) Με Φ.Π.Α
5000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
100 V
Package Type
SuperSO8 5 x 6 Dual
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.061 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Transistor Material
Si
Number of Elements per Chip
2
Series
OptiMOS-T2
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products