Infineon OptiMOS™ -T2 Dual N-Channel MOSFET, 16 A, 100 V, 8-Pin SuperSO8 5 x 6 Dual IPG16N10S461AATMA1

Κωδικός Προϊόντος της RS: 214-9058PΚατασκευαστής: InfineonΚωδικός Κατασκευαστή: IPG16N10S461AATMA1
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™ -T2

Package Type

SuperSO8 5 x 6 Dual

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.061 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

2

Transistor Material

Si

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P.O.A.

Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

Infineon OptiMOS™ -T2 Dual N-Channel MOSFET, 16 A, 100 V, 8-Pin SuperSO8 5 x 6 Dual IPG16N10S461AATMA1
Επιλέγξτε συσκευασία

P.O.A.

Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

Infineon OptiMOS™ -T2 Dual N-Channel MOSFET, 16 A, 100 V, 8-Pin SuperSO8 5 x 6 Dual IPG16N10S461AATMA1

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™ -T2

Package Type

SuperSO8 5 x 6 Dual

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.061 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Number of Elements per Chip

2

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more