Infineon OptiMOS™ 5 N-Channel MOSFET, 300 A, 100 V, 8-Pin HSOF-8 IPT015N10N5ATMA1

Κωδικός Προϊόντος της RS: 170-2320Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: IPT015N10N5ATMA1
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

300 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™ 5

Package Type

HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

10.58mm

Number of Elements per Chip

1

Length

10.1mm

Typical Gate Charge @ Vgs

169 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

2.4mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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€ 9.720,00

€ 4,86 Μονάδας (Σε ένα καρούλι των 2000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 12.052,80

€ 6,026 Μονάδας (Σε ένα καρούλι των 2000) Με Φ.Π.Α

Infineon OptiMOS™ 5 N-Channel MOSFET, 300 A, 100 V, 8-Pin HSOF-8 IPT015N10N5ATMA1

€ 9.720,00

€ 4,86 Μονάδας (Σε ένα καρούλι των 2000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 12.052,80

€ 6,026 Μονάδας (Σε ένα καρούλι των 2000) Με Φ.Π.Α

Infineon OptiMOS™ 5 N-Channel MOSFET, 300 A, 100 V, 8-Pin HSOF-8 IPT015N10N5ATMA1

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

300 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™ 5

Package Type

HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

10.58mm

Number of Elements per Chip

1

Length

10.1mm

Typical Gate Charge @ Vgs

169 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

2.4mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more