N-Channel MOSFET, 300 A, 100 V, 8-Pin HSOF-8 Infineon IPT020N10N3ATMA1
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
300 A
Maximum Drain Source Voltage
100 V
Package Type
HSOF-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
156 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
10.1mm
Number of Elements per Chip
1
Transistor Material
Si
Length
10.58mm
Forward Diode Voltage
1V
Height
2.4mm
Series
OptiMOS 3
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 5,82
Μονάδας (Σε ένα καρούλι των 2000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 7,217
Μονάδας (Σε ένα καρούλι των 2000) (Including VAT) Με Φ.Π.Α
2000
€ 5,82
Μονάδας (Σε ένα καρούλι των 2000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 7,217
Μονάδας (Σε ένα καρούλι των 2000) (Including VAT) Με Φ.Π.Α
2000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
300 A
Maximum Drain Source Voltage
100 V
Package Type
HSOF-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
156 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
10.1mm
Number of Elements per Chip
1
Transistor Material
Si
Length
10.58mm
Forward Diode Voltage
1V
Height
2.4mm
Series
OptiMOS 3
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products