Infineon CoolMOS™ P7 Dual N-Channel MOSFET, 386 A, 650 V, 3-Pin TO-247 IPW60R024P7XKSA1

Κωδικός Προϊόντος της RS: 219-6019Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: IPW60R024P7XKSA1
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

386 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™ P7

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.024 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

2

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 15,06

€ 15,06 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 18,67

€ 18,67 Μονάδας Με Φ.Π.Α

Infineon CoolMOS™ P7 Dual N-Channel MOSFET, 386 A, 650 V, 3-Pin TO-247 IPW60R024P7XKSA1
Επιλέγξτε συσκευασία

€ 15,06

€ 15,06 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 18,67

€ 18,67 Μονάδας Με Φ.Π.Α

Infineon CoolMOS™ P7 Dual N-Channel MOSFET, 386 A, 650 V, 3-Pin TO-247 IPW60R024P7XKSA1
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Quantity ΠοσότηταΤιμή μονάδας
1 - 4€ 15,06
5 - 9€ 14,07
10 - 24€ 13,36
25 - 49€ 12,61
50+€ 11,82

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

386 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™ P7

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.024 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

2

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more