Infineon CoolMOS™ C6 N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-247 IPW60R190C6FKSA1
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Series
CoolMOS™ C6
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
151 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
16.13mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
63 nC @ 10 V
Width
5.21mm
Height
21.1mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 5,30
€ 5,30 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 6,57
€ 6,57 Μονάδας Με Φ.Π.Α
Standard
1
€ 5,30
€ 5,30 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 6,57
€ 6,57 Μονάδας Με Φ.Π.Α
Standard
1
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| Quantity Ποσότητα | Τιμή μονάδας |
|---|---|
| 1 - 9 | € 5,30 |
| 10 - 24 | € 5,09 |
| 25 - 49 | € 4,96 |
| 50 - 99 | € 4,80 |
| 100+ | € 4,57 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Series
CoolMOS™ C6
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
151 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
16.13mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
63 nC @ 10 V
Width
5.21mm
Height
21.1mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products