Infineon HEXFET N-Channel MOSFET, 94 A, 55 V, 3-Pin D2PAK IRF1010ZSTRLPBF
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
94 A
Maximum Drain Source Voltage
55 V
Package Type
D2PAK (TO-263)
Series
HEXFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.67mm
Typical Gate Charge @ Vgs
63 nC @ 10 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
11.3mm
Transistor Material
Si
Forward Diode Voltage
1.3V
Height
4.83mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 105.50
€ 2.11 Each (Supplied on a Reel) (Exc. Vat)
€ 130.82
€ 2.616 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
50
€ 105.50
€ 2.11 Each (Supplied on a Reel) (Exc. Vat)
€ 130.82
€ 2.616 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
50
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Reel |
|---|---|---|
| 50 - 90 | € 2.11 | € 21.10 |
| 100 - 240 | € 2.06 | € 20.60 |
| 250 - 490 | € 1.98 | € 19.80 |
| 500+ | € 1.28 | € 12.80 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
94 A
Maximum Drain Source Voltage
55 V
Package Type
D2PAK (TO-263)
Series
HEXFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.67mm
Typical Gate Charge @ Vgs
63 nC @ 10 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
11.3mm
Transistor Material
Si
Forward Diode Voltage
1.3V
Height
4.83mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products