Infineon HEXFET N-Channel MOSFET, 94 A, 55 V, 3-Pin D2PAK IRF1010ZSTRLPBF

Κωδικός Προϊόντος της RS: 915-4923PΚατασκευαστής: InfineonΚωδικός Κατασκευαστή: IRF1010ZSTRLPBF
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

94 A

Maximum Drain Source Voltage

55 V

Package Type

D2PAK (TO-263)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

63 nC @ 10 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

11.3mm

Height

4.83mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Λεπτομέρειες Προϊόντος

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Infineon HEXFET N-Channel MOSFET, 94 A, 55 V, 3-Pin D2PAK IRF1010ZSPBF
P.O.A.Μονάδας (διαθέσιμο σε μία ράγα) (Exc. Vat)Χωρίς Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 105,50

€ 2,11 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

€ 130,82

€ 2,616 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α

Infineon HEXFET N-Channel MOSFET, 94 A, 55 V, 3-Pin D2PAK IRF1010ZSTRLPBF
Επιλέγξτε συσκευασία

€ 105,50

€ 2,11 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

€ 130,82

€ 2,616 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α

Infineon HEXFET N-Channel MOSFET, 94 A, 55 V, 3-Pin D2PAK IRF1010ZSTRLPBF
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Quantity ΠοσότηταΤιμή μονάδαςPer Καρούλι
50 - 90€ 2,11€ 21,10
100 - 240€ 2,06€ 20,60
250 - 490€ 1,98€ 19,80
500+€ 1,28€ 12,80

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
Infineon HEXFET N-Channel MOSFET, 94 A, 55 V, 3-Pin D2PAK IRF1010ZSPBF
P.O.A.Μονάδας (διαθέσιμο σε μία ράγα) (Exc. Vat)Χωρίς Φ.Π.Α

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

94 A

Maximum Drain Source Voltage

55 V

Package Type

D2PAK (TO-263)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

63 nC @ 10 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

11.3mm

Height

4.83mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Λεπτομέρειες Προϊόντος

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
Infineon HEXFET N-Channel MOSFET, 94 A, 55 V, 3-Pin D2PAK IRF1010ZSPBF
P.O.A.Μονάδας (διαθέσιμο σε μία ράγα) (Exc. Vat)Χωρίς Φ.Π.Α