Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
55 V
Series
HEXFET
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
170 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.69mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.54mm
Typical Gate Charge @ Vgs
76 nC @ 10 V
Height
8.77mm
Minimum Operating Temperature
-55 °C
Χώρα Προέλευσης
Mexico
Λεπτομέρειες Προϊόντος
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 1,66
Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α
€ 2,058
Μονάδας (Σε μία ράγα των 50) (Including VAT) Με Φ.Π.Α
50
€ 1,66
Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α
€ 2,058
Μονάδας (Σε μία ράγα των 50) (Including VAT) Με Φ.Π.Α
50
Αγοράστε μαζικά
Quantity Ποσότητα | Τιμή μονάδας | Per Ράγα |
---|---|---|
50 - 50 | € 1,66 | € 83,00 |
100 - 200 | € 1,36 | € 68,00 |
250 - 450 | € 1,29 | € 64,50 |
500 - 950 | € 1,24 | € 62,00 |
1000+ | € 1,16 | € 58,00 |
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
55 V
Series
HEXFET
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
170 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.69mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.54mm
Typical Gate Charge @ Vgs
76 nC @ 10 V
Height
8.77mm
Minimum Operating Temperature
-55 °C
Χώρα Προέλευσης
Mexico
Λεπτομέρειες Προϊόντος
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.