Infineon HEXFET Silicon N-Channel MOSFET, 81 A, 20 V DirectFET ISOMETRIC IRF6636TRPBF
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
81 A
Maximum Drain Source Voltage
20 V
Series
HEXFET
Package Type
DirectFET ISOMETRIC
Mounting Type
Surface Mount
Maximum Drain Source Resistance
0.0064 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.45V
Number of Elements per Chip
1
Transistor Material
Silicon
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€ 6.288,00
€ 1,31 Μονάδας (Σε ένα καρούλι των 4800) (Exc. Vat)Χωρίς Φ.Π.Α
€ 7.797,12
€ 1,624 Μονάδας (Σε ένα καρούλι των 4800) Με Φ.Π.Α
4800
€ 6.288,00
€ 1,31 Μονάδας (Σε ένα καρούλι των 4800) (Exc. Vat)Χωρίς Φ.Π.Α
€ 7.797,12
€ 1,624 Μονάδας (Σε ένα καρούλι των 4800) Με Φ.Π.Α
4800
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Ideate. Create. Collaborate
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
81 A
Maximum Drain Source Voltage
20 V
Series
HEXFET
Package Type
DirectFET ISOMETRIC
Mounting Type
Surface Mount
Maximum Drain Source Resistance
0.0064 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.45V
Number of Elements per Chip
1
Transistor Material
Silicon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products