N-Channel MOSFET, 55 A, 80 V, 7-Pin DirectFET ISOMETRIC Infineon IRF6668TRPBF
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
80 V
Series
HEXFET
Package Type
DirectFET ISOMETRIC
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
0.015 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.9V
Number of Elements per Chip
1
Transistor Material
Si
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€ 1,34
Μονάδας (Σε ένα καρούλι των 4800) (Exc. Vat)Χωρίς Φ.Π.Α
€ 1,662
Μονάδας (Σε ένα καρούλι των 4800) (Including VAT) Με Φ.Π.Α
4800
€ 1,34
Μονάδας (Σε ένα καρούλι των 4800) (Exc. Vat)Χωρίς Φ.Π.Α
€ 1,662
Μονάδας (Σε ένα καρούλι των 4800) (Including VAT) Με Φ.Π.Α
4800
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
80 V
Series
HEXFET
Package Type
DirectFET ISOMETRIC
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
0.015 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.9V
Number of Elements per Chip
1
Transistor Material
Si
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products