N/P-Channel-Channel MOSFET, 3.4 A, 4.7 A, 55 V Depletion, 8-Pin SO-8 Infineon IRF7343TRPBF

Κωδικός Προϊόντος της RS: 170-2265Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: IRF7343TRPBF
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N, P

Maximum Continuous Drain Current

3.4 A, 4.7 A

Maximum Drain Source Voltage

55 V

Package Type

SO-8

Series

IRF7343PbF

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.065 Ω, 0.17 Ω

Channel Mode

Depletion

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

2.3 nC @ 10 V, 24 nC @ 10 V

Width

4mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

1.5mm

Minimum Operating Temperature

-55 °C

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 0,58

Μονάδας (Σε ένα καρούλι των 4000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,719

Μονάδας (Σε ένα καρούλι των 4000) (Including VAT) Με Φ.Π.Α

N/P-Channel-Channel MOSFET, 3.4 A, 4.7 A, 55 V Depletion, 8-Pin SO-8 Infineon IRF7343TRPBF

€ 0,58

Μονάδας (Σε ένα καρούλι των 4000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,719

Μονάδας (Σε ένα καρούλι των 4000) (Including VAT) Με Φ.Π.Α

N/P-Channel-Channel MOSFET, 3.4 A, 4.7 A, 55 V Depletion, 8-Pin SO-8 Infineon IRF7343TRPBF
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N, P

Maximum Continuous Drain Current

3.4 A, 4.7 A

Maximum Drain Source Voltage

55 V

Package Type

SO-8

Series

IRF7343PbF

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.065 Ω, 0.17 Ω

Channel Mode

Depletion

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

2.3 nC @ 10 V, 24 nC @ 10 V

Width

4mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

1.5mm

Minimum Operating Temperature

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more