Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
40 V
Package Type
SO
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
30 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
12 V
Width
4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
29 nC @ 4.5 V
Height
1.5mm
Series
IRF7470PbF
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
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P.O.A.
4000
P.O.A.
4000
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
40 V
Package Type
SO
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
30 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
12 V
Width
4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
29 nC @ 4.5 V
Height
1.5mm
Series
IRF7470PbF
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V