N-Channel MOSFET, 340 A, 40 V, 3-Pin TO-220AB Infineon IRFB3004PBF

Κωδικός Προϊόντος της RS: 688-6904Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: IRFB3004PBF
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

340 A

Maximum Drain Source Voltage

40 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

380 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.67mm

Width

4.83mm

Transistor Material

Si

Typical Gate Charge @ Vgs

160 nC @ 10 V

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

9.02mm

Λεπτομέρειες Προϊόντος

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Infineon HEXFET N-Channel MOSFET, 343 A, 40 V, 3-Pin TO-220AB IRLB3034PBF
€ 5,245Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α
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N-Channel MOSFET, 340 A, 40 V, 3-Pin TO-220AB Infineon IRFB3004PBF

P.O.A.

Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α

N-Channel MOSFET, 340 A, 40 V, 3-Pin TO-220AB Infineon IRFB3004PBF
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Παρακαλούμε ελέγξτε ξανά αργότερα.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
Infineon HEXFET N-Channel MOSFET, 343 A, 40 V, 3-Pin TO-220AB IRLB3034PBF
€ 5,245Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

340 A

Maximum Drain Source Voltage

40 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

380 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.67mm

Width

4.83mm

Transistor Material

Si

Typical Gate Charge @ Vgs

160 nC @ 10 V

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

9.02mm

Λεπτομέρειες Προϊόντος

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
Infineon HEXFET N-Channel MOSFET, 343 A, 40 V, 3-Pin TO-220AB IRLB3034PBF
€ 5,245Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α