N-Channel MOSFET, 56 A, 100 V, 3-Pin DPAK Infineon IRFR4510PBF
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
56 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
13.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
143 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
54 nC @ 10 V
Width
6.22mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
2.39mm
Series
HEXFET
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P.O.A.
Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α
Standard
5
P.O.A.
Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Standard
5
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
56 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
13.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
143 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
54 nC @ 10 V
Width
6.22mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
2.39mm
Series
HEXFET
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products