P-Channel MOSFET, 31 A, 55 V, 3-Pin DPAK Infineon IRFR5305TRLPBF

Κωδικός Προϊόντος της RS: 170-2262Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: IRFR5305TRLPBF
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

P

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

55 V

Series

IRFR5305PBF

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

63 nC @ 10 V

Width

7.49mm

Number of Elements per Chip

1

Height

2.39mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 0,71

Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,88

Μονάδας (Σε ένα καρούλι των 3000) (Including VAT) Με Φ.Π.Α

P-Channel MOSFET, 31 A, 55 V, 3-Pin DPAK Infineon IRFR5305TRLPBF

€ 0,71

Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,88

Μονάδας (Σε ένα καρούλι των 3000) (Including VAT) Με Φ.Π.Α

P-Channel MOSFET, 31 A, 55 V, 3-Pin DPAK Infineon IRFR5305TRLPBF
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

P

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

55 V

Series

IRFR5305PBF

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

63 nC @ 10 V

Width

7.49mm

Number of Elements per Chip

1

Height

2.39mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more