Infineon StrongIRFET N-Channel MOSFET, 195 A, 60 V, 3-Pin D2PAK IRFS7534TRLPBF
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
195 A
Maximum Drain Source Voltage
60 V
Series
StrongIRFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
294 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Typical Gate Charge @ Vgs
186 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
9.65mm
Height
4.83mm
Minimum Operating Temperature
-55 °C
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 1.568,00
€ 1,96 Μονάδας (Σε ένα καρούλι των 800) (Exc. Vat)Χωρίς Φ.Π.Α
€ 1.944,32
€ 2,43 Μονάδας (Σε ένα καρούλι των 800) Με Φ.Π.Α
800
€ 1.568,00
€ 1,96 Μονάδας (Σε ένα καρούλι των 800) (Exc. Vat)Χωρίς Φ.Π.Α
€ 1.944,32
€ 2,43 Μονάδας (Σε ένα καρούλι των 800) Με Φ.Π.Α
800
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
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| Quantity Ποσότητα | Τιμή μονάδας | Per Καρούλι |
|---|---|---|
| 800 - 800 | € 1,96 | € 1.568,00 |
| 1600+ | € 1,91 | € 1.528,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
195 A
Maximum Drain Source Voltage
60 V
Series
StrongIRFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
294 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Typical Gate Charge @ Vgs
186 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
9.65mm
Height
4.83mm
Minimum Operating Temperature
-55 °C
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products