Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
8.8 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Series
SIPMOS®
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
6.5mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Automotive Standard
AEC-Q101
Height
2.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.55V
Λεπτομέρειες Προϊόντος
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 76,00
€ 0,76 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α
€ 94,24
€ 0,942 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α
Συσκευασία Παραγωγής (Καρούλι)
100
€ 76,00
€ 0,76 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α
€ 94,24
€ 0,942 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Συσκευασία Παραγωγής (Καρούλι)
100
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
| Quantity Ποσότητα | Τιμή μονάδας | Per Καρούλι |
|---|---|---|
| 100 - 240 | € 0,76 | € 7,60 |
| 250 - 490 | € 0,73 | € 7,30 |
| 500 - 990 | € 0,73 | € 7,30 |
| 1000+ | € 0,68 | € 6,80 |
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
8.8 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Series
SIPMOS®
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
6.5mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Automotive Standard
AEC-Q101
Height
2.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.55V
Λεπτομέρειες Προϊόντος
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


