Infineon SIPMOS® P-Channel MOSFET, 11.3 A, 100 V, 3-Pin TO-220 SPP15P10PLHXKSA1

Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
11.3 A
Maximum Drain Source Voltage
100 V
Series
SIPMOS®
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
128 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.36mm
Typical Gate Charge @ Vgs
47 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
15.95mm
Minimum Operating Temperature
-55 °C
Χώρα Προέλευσης
Malaysia
Λεπτομέρειες Προϊόντος
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 14,90
€ 2,98 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α
€ 18,48
€ 3,695 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α
Standard
5
€ 14,90
€ 2,98 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α
€ 18,48
€ 3,695 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Standard
5
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
| Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
|---|---|---|
| 5 - 45 | € 2,98 | € 14,90 |
| 50 - 120 | € 2,71 | € 13,55 |
| 125 - 245 | € 2,56 | € 12,80 |
| 250 - 495 | € 2,43 | € 12,15 |
| 500+ | € 2,30 | € 11,50 |
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
11.3 A
Maximum Drain Source Voltage
100 V
Series
SIPMOS®
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
128 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.36mm
Typical Gate Charge @ Vgs
47 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
15.95mm
Minimum Operating Temperature
-55 °C
Χώρα Προέλευσης
Malaysia
Λεπτομέρειες Προϊόντος
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

