N-Channel MOSFET Transistor, 280 A, 40 V, 3-Pin TO-220 International Rectifier IRF2804PBF
Τεχνικό φυλλάδιο
Προδιαγραφές
Channel Type
N
Maximum Continuous Drain Current
280 A
Maximum Drain Source Voltage
40 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
160 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Width
4.83mm
Transistor Material
Si
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
9.02mm
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P.O.A.
1
P.O.A.
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
1
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
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Τεχνικό φυλλάδιο
Προδιαγραφές
Channel Type
N
Maximum Continuous Drain Current
280 A
Maximum Drain Source Voltage
40 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
160 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Width
4.83mm
Transistor Material
Si
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
9.02mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products