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P-Channel MOSFET Transistor, 74 A, 55 V, 3-Pin TO-220AB International Rectifier IRF4905PBF

Κωδικός Προϊόντος της RS: 300-515Κατασκευαστής: International RectifierΚωδικός Κατασκευαστή: IRF4905PBF
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

P

Maximum Continuous Drain Current

74 A

Maximum Drain Source Voltage

55 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

180 nC @ 10 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

8.77mm

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Infineon HEXFET P-Channel MOSFET, 74 A, 55 V, 3-Pin TO-220AB IRF4905PBF
€ 3,11Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

P.O.A.

P-Channel MOSFET Transistor, 74 A, 55 V, 3-Pin TO-220AB International Rectifier IRF4905PBF

P.O.A.

P-Channel MOSFET Transistor, 74 A, 55 V, 3-Pin TO-220AB International Rectifier IRF4905PBF
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
Infineon HEXFET P-Channel MOSFET, 74 A, 55 V, 3-Pin TO-220AB IRF4905PBF
€ 3,11Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

P

Maximum Continuous Drain Current

74 A

Maximum Drain Source Voltage

55 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

180 nC @ 10 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

8.77mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
Infineon HEXFET P-Channel MOSFET, 74 A, 55 V, 3-Pin TO-220AB IRF4905PBF
€ 3,11Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α