IXYS HiperFET, Polar3 N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXFB110N60P3

Κωδικός Προϊόντος της RS: 168-4726Κατασκευαστής: IXYSΚωδικός Κατασκευαστή: IXFB110N60P3
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

600 V

Series

HiperFET, Polar3

Package Type

PLUS264

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

56 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

1.89 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

5.31mm

Length

20.29mm

Typical Gate Charge @ Vgs

245 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

26.59mm

Χώρα Προέλευσης

United States

Λεπτομέρειες Προϊόντος

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 695,00

€ 27,80 Μονάδας (Σε μία ράγα των 25) (Exc. Vat)Χωρίς Φ.Π.Α

€ 861,80

€ 34,472 Μονάδας (Σε μία ράγα των 25) Με Φ.Π.Α

IXYS HiperFET, Polar3 N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXFB110N60P3

€ 695,00

€ 27,80 Μονάδας (Σε μία ράγα των 25) (Exc. Vat)Χωρίς Φ.Π.Α

€ 861,80

€ 34,472 Μονάδας (Σε μία ράγα των 25) Με Φ.Π.Α

IXYS HiperFET, Polar3 N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXFB110N60P3
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

600 V

Series

HiperFET, Polar3

Package Type

PLUS264

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

56 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

1.89 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

5.31mm

Length

20.29mm

Typical Gate Charge @ Vgs

245 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

26.59mm

Χώρα Προέλευσης

United States

Λεπτομέρειες Προϊόντος

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more