N-Channel MOSFET, 150 A, 650 V, 3-Pin PLUS264 IXYS IXFB150N65X2

Κωδικός Προϊόντος της RS: 146-4401Κατασκευαστής: IXYSΚωδικός Κατασκευαστή: IXFB150N65X2
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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

150 A

Maximum Drain Source Voltage

650 V

Package Type

PLUS264

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

1.56 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

5.31mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

20.26mm

Typical Gate Charge @ Vgs

355 nC @ 10 V nC

Height

26.59mm

Series

HiperFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

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P.O.A.

N-Channel MOSFET, 150 A, 650 V, 3-Pin PLUS264 IXYS IXFB150N65X2

1

Διατίθεται σε πολλαπλάσια από 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

N-Channel MOSFET, 150 A, 650 V, 3-Pin PLUS264 IXYS IXFB150N65X2
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

1

Διατίθεται σε πολλαπλάσια από 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

150 A

Maximum Drain Source Voltage

650 V

Package Type

PLUS264

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

1.56 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

5.31mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

20.26mm

Typical Gate Charge @ Vgs

355 nC @ 10 V nC

Height

26.59mm

Series

HiperFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more