IXYS HiperFET, Polar N-Channel MOSFET, 120 A, 200 V, 3-Pin TO-247 IXFH120N20P
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
200 V
Series
HiperFET, Polar
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
714 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
152 nC @ 10 V
Width
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
16.26mm
Maximum Operating Temperature
+175 °C
Height
21.46mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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€ 19,37
€ 19,37 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 24,02
€ 24,02 Μονάδας Με Φ.Π.Α
Standard
1
€ 19,37
€ 19,37 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 24,02
€ 24,02 Μονάδας Με Φ.Π.Α
Standard
1
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| Quantity Ποσότητα | Τιμή μονάδας |
|---|---|
| 1 - 4 | € 19,37 |
| 5 - 19 | € 18,12 |
| 20 - 49 | € 17,41 |
| 50 - 99 | € 13,60 |
| 100+ | € 13,18 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
200 V
Series
HiperFET, Polar
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
22 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
714 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
152 nC @ 10 V
Width
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
16.26mm
Maximum Operating Temperature
+175 °C
Height
21.46mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products