IXYS HiperFET, X2-Class N-Channel MOSFET, 46 A, 650 V, 3-Pin TO-247 IXFH46N65X2
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
46 A
Maximum Drain Source Voltage
650 V
Series
HiperFET, X2-Class
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
69 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
660 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
21.34mm
Length
16.13mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
98 nC @ 10 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
5.21mm
Χώρα Προέλευσης
United States
Λεπτομέρειες Προϊόντος
N-channel Power MOSFET, IXYS HiPerFET™ X2 Series
The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an enhanced high-speed intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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€ 308,40
€ 10,28 Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
€ 382,42
€ 12,747 Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α
30
€ 308,40
€ 10,28 Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
€ 382,42
€ 12,747 Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α
30
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Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
46 A
Maximum Drain Source Voltage
650 V
Series
HiperFET, X2-Class
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
69 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.5V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
660 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
21.34mm
Length
16.13mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
98 nC @ 10 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
5.21mm
Χώρα Προέλευσης
United States
Λεπτομέρειες Προϊόντος
N-channel Power MOSFET, IXYS HiPerFET™ X2 Series
The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an enhanced high-speed intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products