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IXYS HiperFET, Polar N-Channel MOSFET, 69 A, 300 V, 3-Pin TO-247 IXFH69N30P

Κωδικός Προϊόντος της RS: 193-543Κατασκευαστής: IXYSΚωδικός Κατασκευαστή: IXFH69N30P
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

69 A

Maximum Drain Source Voltage

300 V

Package Type

TO-247

Series

HiperFET, Polar

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

49 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

500 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

16.26mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

156 nC @ 10 V

Width

5.3mm

Transistor Material

Si

Height

21.46mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 16,76

€ 16,76 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 20,78

€ 20,78 Μονάδας Με Φ.Π.Α

IXYS HiperFET, Polar N-Channel MOSFET, 69 A, 300 V, 3-Pin TO-247 IXFH69N30P
Επιλέγξτε συσκευασία

€ 16,76

€ 16,76 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 20,78

€ 20,78 Μονάδας Με Φ.Π.Α

IXYS HiperFET, Polar N-Channel MOSFET, 69 A, 300 V, 3-Pin TO-247 IXFH69N30P
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Quantity ΠοσότηταΤιμή μονάδας
1 - 9€ 16,76
10+€ 14,83

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

69 A

Maximum Drain Source Voltage

300 V

Package Type

TO-247

Series

HiperFET, Polar

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

49 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

500 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

16.26mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

156 nC @ 10 V

Width

5.3mm

Transistor Material

Si

Height

21.46mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more