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Λόγω απαραίτητων εργασιών συντήρησης, ο ιστότοπος δεν θα είναι διαθέσιμος από τις 3 π.μ. έως τις 7 π.μ. (GMT) το Σάββατο 10 Μαΐου. Ζητούμε συγγνώμη για την όποια αναστάτωση.

IXYS HiperFET, Polar N-Channel MOSFET, 96 A, 150 V, 3-Pin TO-247 IXFH96N15P

Κωδικός Προϊόντος της RS: 194-322Κατασκευαστής: IXYSΚωδικός Κατασκευαστή: IXFH96N15P
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

96 A

Maximum Drain Source Voltage

150 V

Series

HiperFET, Polar

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

480 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

110 nC @ 10 V

Width

5.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

16.26mm

Height

21.46mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 8,72

€ 8,72 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 10,81

€ 10,81 Μονάδας Με Φ.Π.Α

IXYS HiperFET, Polar N-Channel MOSFET, 96 A, 150 V, 3-Pin TO-247 IXFH96N15P
Επιλέγξτε συσκευασία

€ 8,72

€ 8,72 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 10,81

€ 10,81 Μονάδας Με Φ.Π.Α

IXYS HiperFET, Polar N-Channel MOSFET, 96 A, 150 V, 3-Pin TO-247 IXFH96N15P
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Quantity ΠοσότηταΤιμή μονάδας
1 - 4€ 8,72
5 - 19€ 8,30
20 - 49€ 7,88
50 - 99€ 6,79
100+€ 6,66

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

96 A

Maximum Drain Source Voltage

150 V

Series

HiperFET, Polar

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

480 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

110 nC @ 10 V

Width

5.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

16.26mm

Height

21.46mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more