IXYS HiperFET, Polar N-Channel MOSFET, 115 A, 300 V, 4-Pin SOT-227 IXFN140N30P

Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
115 A
Maximum Drain Source Voltage
300 V
Package Type
SOT-227
Series
HiperFET, Polar
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
24 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
700 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
25.07mm
Transistor Material
Si
Number of Elements per Chip
1
Length
38.2mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
185 nC @ 10 V
Height
9.6mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
€ 44,58
€ 44,58 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 55,28
€ 55,28 Μονάδας Με Φ.Π.Α
Standard
1
€ 44,58
€ 44,58 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 55,28
€ 55,28 Μονάδας Με Φ.Π.Α
Standard
1
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
Quantity Ποσότητα | Τιμή μονάδας |
---|---|
1 - 1 | € 44,58 |
2 - 4 | € 44,38 |
5+ | € 43,64 |
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
115 A
Maximum Drain Source Voltage
300 V
Package Type
SOT-227
Series
HiperFET, Polar
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
24 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
700 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
25.07mm
Transistor Material
Si
Number of Elements per Chip
1
Length
38.2mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
185 nC @ 10 V
Height
9.6mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS