IXYS HiperFET, Polar N-Channel MOSFET, 7 A, 800 V, 3-Pin TO-220 IXFP7N80P

RS Stock No.: 168-4486Brand: IXYSManufacturers Part No.: IXFP7N80P
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Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

800 V

Series

HiperFET, Polar

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.44 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.83mm

Length

10.66mm

Typical Gate Charge @ Vgs

32 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Height

9.15mm

Minimum Operating Temperature

-55 °C

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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Stock information temporarily unavailable.

€ 231.00

€ 4.62 Each (In a Tube of 50) (Exc. Vat)

€ 286.44

€ 5.729 Each (In a Tube of 50) (inc. VAT)

IXYS HiperFET, Polar N-Channel MOSFET, 7 A, 800 V, 3-Pin TO-220 IXFP7N80P

€ 231.00

€ 4.62 Each (In a Tube of 50) (Exc. Vat)

€ 286.44

€ 5.729 Each (In a Tube of 50) (inc. VAT)

IXYS HiperFET, Polar N-Channel MOSFET, 7 A, 800 V, 3-Pin TO-220 IXFP7N80P
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

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Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

800 V

Series

HiperFET, Polar

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.44 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.83mm

Length

10.66mm

Typical Gate Charge @ Vgs

32 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Height

9.15mm

Minimum Operating Temperature

-55 °C

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more