IXYS HiperFET, Polar N-Channel MOSFET, 7 A, 800 V, 3-Pin TO-220 IXFP7N80P
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
800 V
Series
HiperFET, Polar
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.44 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Width
4.83mm
Length
10.66mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
9.15mm
Λεπτομέρειες Προϊόντος
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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€ 231,00
€ 4,62 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α
€ 286,44
€ 5,729 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α
50
€ 231,00
€ 4,62 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α
€ 286,44
€ 5,729 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α
50
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Ideate. Create. Collaborate
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
800 V
Series
HiperFET, Polar
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.44 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Width
4.83mm
Length
10.66mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
9.15mm
Λεπτομέρειες Προϊόντος
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products