IXYS IXGH30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
IXYSMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Λεπτομέρειες Προϊόντος
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 20,13
€ 20,13 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 24,96
€ 24,96 Μονάδας Με Φ.Π.Α
1
€ 20,13
€ 20,13 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 24,96
€ 24,96 Μονάδας Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
1
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
| Quantity Ποσότητα | Τιμή μονάδας |
|---|---|
| 1 - 9 | € 20,13 |
| 10+ | € 17,80 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
IXYSMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Λεπτομέρειες Προϊόντος
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products