IXYS IXGH6N170 IGBT, 6 A 1700 V, 3-Pin TO-247AD, Through Hole
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
IXYSMaximum Continuous Collector Current
6 A
Maximum Collector Emitter Voltage
1700 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-247AD
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Length
16.26mm
Width
5.3mm
Height
21.46mm
Dimensions
16.26 x 5.3 x 21.46mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Λεπτομέρειες Προϊόντος
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 17,20
€ 17,20 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 21,33
€ 21,33 Μονάδας Με Φ.Π.Α
1
€ 17,20
€ 17,20 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 21,33
€ 21,33 Μονάδας Με Φ.Π.Α
1
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| Quantity Ποσότητα | Τιμή μονάδας |
|---|---|
| 1 - 4 | € 17,20 |
| 5 - 24 | € 15,74 |
| 25 - 49 | € 14,80 |
| 50 - 99 | € 14,04 |
| 100+ | € 13,26 |
Ideate. Create. Collaborate
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
IXYSMaximum Continuous Collector Current
6 A
Maximum Collector Emitter Voltage
1700 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-247AD
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Length
16.26mm
Width
5.3mm
Height
21.46mm
Dimensions
16.26 x 5.3 x 21.46mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Λεπτομέρειες Προϊόντος
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products