IXYS, Type N-Channel IGBT Module, 320 A 600 V, 4-Pin SOT-227, Surface
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
IXYSMaximum Continuous Collector Current Ic
320A
Product Type
IGBT Module
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
735W
Package Type
SOT-227
Mount Type
Surface
Channel Type
Type N
Pin Count
4
Switching Speed
5kHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
1.3V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
38.23mm
Height
9.6mm
Standards/Approvals
No
Series
Low-Frequency
Automotive Standard
No
Λεπτομέρειες Προϊόντος
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
€ 630,60
€ 63,06 Μονάδας (Σε μία ράγα των 10) (Exc. Vat)Χωρίς Φ.Π.Α
€ 781,94
€ 78,194 Μονάδας (Σε μία ράγα των 10) Με Φ.Π.Α
10
€ 630,60
€ 63,06 Μονάδας (Σε μία ράγα των 10) (Exc. Vat)Χωρίς Φ.Π.Α
€ 781,94
€ 78,194 Μονάδας (Σε μία ράγα των 10) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
10
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
IXYSMaximum Continuous Collector Current Ic
320A
Product Type
IGBT Module
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
735W
Package Type
SOT-227
Mount Type
Surface
Channel Type
Type N
Pin Count
4
Switching Speed
5kHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
1.3V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
38.23mm
Height
9.6mm
Standards/Approvals
No
Series
Low-Frequency
Automotive Standard
No
Λεπτομέρειες Προϊόντος
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products