IXYS Linear N-Channel MOSFET, 22 A, 1000 V, 4-Pin SOT-227 IXTN22N100L

Κωδικός Προϊόντος της RS: 168-4610Κατασκευαστής: IXYSΚωδικός Κατασκευαστή: IXTN22N100L
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

1000 V

Series

Linear

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Maximum Power Dissipation

700 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

25.07mm

Length

38.2mm

Typical Gate Charge @ Vgs

270 nC @ 15 V

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

9.6mm

Χώρα Προέλευσης

United States

Λεπτομέρειες Προϊόντος

N-Channel Power MOSFET, IXYS Linear Series

N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 919,30

€ 91,93 Μονάδας (Σε μία ράγα των 10) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1.139,93

€ 113,993 Μονάδας (Σε μία ράγα των 10) Με Φ.Π.Α

IXYS Linear N-Channel MOSFET, 22 A, 1000 V, 4-Pin SOT-227 IXTN22N100L

€ 919,30

€ 91,93 Μονάδας (Σε μία ράγα των 10) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1.139,93

€ 113,993 Μονάδας (Σε μία ράγα των 10) Με Φ.Π.Α

IXYS Linear N-Channel MOSFET, 22 A, 1000 V, 4-Pin SOT-227 IXTN22N100L
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

1000 V

Series

Linear

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Maximum Power Dissipation

700 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

25.07mm

Length

38.2mm

Typical Gate Charge @ Vgs

270 nC @ 15 V

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

9.6mm

Χώρα Προέλευσης

United States

Λεπτομέρειες Προϊόντος

N-Channel Power MOSFET, IXYS Linear Series

N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more