IXYS Linear N-Channel MOSFET, 46 A, 500 V, 4-Pin SOT-227 IXTN46N50L
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
46 A
Maximum Drain Source Voltage
500 V
Series
Linear
Package Type
SOT-227
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
6V
Maximum Power Dissipation
700 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
25.07mm
Typical Gate Charge @ Vgs
260 nC @ 15 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
38.2mm
Minimum Operating Temperature
-55 °C
Height
9.6mm
Χώρα Προέλευσης
United States
Λεπτομέρειες Προϊόντος
N-Channel Power MOSFET, IXYS Linear Series
N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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€ 774,70
€ 77,47 Μονάδας (Σε μία ράγα των 10) (Exc. Vat)Χωρίς Φ.Π.Α
€ 960,63
€ 96,063 Μονάδας (Σε μία ράγα των 10) Με Φ.Π.Α
10
€ 774,70
€ 77,47 Μονάδας (Σε μία ράγα των 10) (Exc. Vat)Χωρίς Φ.Π.Α
€ 960,63
€ 96,063 Μονάδας (Σε μία ράγα των 10) Με Φ.Π.Α
10
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Ideate. Create. Collaborate
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
46 A
Maximum Drain Source Voltage
500 V
Series
Linear
Package Type
SOT-227
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
6V
Maximum Power Dissipation
700 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
25.07mm
Typical Gate Charge @ Vgs
260 nC @ 15 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
38.2mm
Minimum Operating Temperature
-55 °C
Height
9.6mm
Χώρα Προέλευσης
United States
Λεπτομέρειες Προϊόντος
N-Channel Power MOSFET, IXYS Linear Series
N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products