IXYS IXYX120N120C3 IGBT, 240 A 1200 V, 3-Pin PLUS247, Through Hole

Κωδικός Προϊόντος της RS: 920-1000Κατασκευαστής: IXYSΚωδικός Κατασκευαστή: IXYX120N120C3
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Προβολή όλων σε IGBTs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

IXYS

Maximum Continuous Collector Current

240 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

1500 W

Package Type

PLUS247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

50kHz

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.34mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Χώρα Προέλευσης

United States

Λεπτομέρειες Προϊόντος

IGBT Discretes, IXYS XPT series

The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 1.420,50

€ 47,35 Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1.761,42

€ 58,714 Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α

IXYS IXYX120N120C3 IGBT, 240 A 1200 V, 3-Pin PLUS247, Through Hole

€ 1.420,50

€ 47,35 Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1.761,42

€ 58,714 Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α

IXYS IXYX120N120C3 IGBT, 240 A 1200 V, 3-Pin PLUS247, Through Hole
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

IXYS

Maximum Continuous Collector Current

240 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

1500 W

Package Type

PLUS247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

50kHz

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.34mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Χώρα Προέλευσης

United States

Λεπτομέρειες Προϊόντος

IGBT Discretes, IXYS XPT series

The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more