IXYS MID200-12A4 Single IGBT Module, 270 A 1200 V, 5-Pin Y3 DCB, Panel Mount
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
IXYSMaximum Continuous Collector Current
270 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Package Type
Y3 DCB
Configuration
Single
Mounting Type
Panel Mount
Channel Type
N
Pin Count
5
Transistor Configuration
Single
Dimensions
110 x 62 x 30mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Λεπτομέρειες Προϊόντος
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 182,92
Μονάδας (Σε ένα Κουτί των 2) (Exc. Vat)Χωρίς Φ.Π.Α
€ 226,821
Μονάδας (Σε ένα Κουτί των 2) (Including VAT) Με Φ.Π.Α
2
€ 182,92
Μονάδας (Σε ένα Κουτί των 2) (Exc. Vat)Χωρίς Φ.Π.Α
€ 226,821
Μονάδας (Σε ένα Κουτί των 2) (Including VAT) Με Φ.Π.Α
2
Αγοράστε μαζικά
| Quantity Ποσότητα | Τιμή μονάδας | Per Κουτί |
|---|---|---|
| 2 - 8 | € 182,92 | € 365,84 |
| 10 - 18 | € 180,93 | € 361,86 |
| 20+ | € 179,11 | € 358,22 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
IXYSMaximum Continuous Collector Current
270 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Package Type
Y3 DCB
Configuration
Single
Mounting Type
Panel Mount
Channel Type
N
Pin Count
5
Transistor Configuration
Single
Dimensions
110 x 62 x 30mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Λεπτομέρειες Προϊόντος
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products