MagnaChip N-Channel MOSFET, 16 A, 550 V, 3-Pin TO-220F MDF16N50GTH
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
550 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
49.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.93mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.71mm
Typical Gate Charge @ Vgs
34.9 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
16.13mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Χώρα Προέλευσης
Korea, Republic Of
Λεπτομέρειες Προϊόντος
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
MOSFET Transistors, MagnaChip
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
P.O.A.
Μονάδας (διαθέσιμο σε μία ράγα) (Exc. Vat)Χωρίς Φ.Π.Α
Συσκευασία Παραγωγής (Ράγα)
5
P.O.A.
Μονάδας (διαθέσιμο σε μία ράγα) (Exc. Vat)Χωρίς Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Συσκευασία Παραγωγής (Ράγα)
5
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
550 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
49.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.93mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.71mm
Typical Gate Charge @ Vgs
34.9 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
16.13mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Χώρα Προέλευσης
Korea, Republic Of
Λεπτομέρειες Προϊόντος
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
MOSFET Transistors, MagnaChip
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products