N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220F MagnaChip MMF60R360PTH

Κωδικός Προϊόντος της RS: 871-5038Κατασκευαστής: MagnaChipΚωδικός Κατασκευαστή: MMF60R360PTH
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

360 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

31 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

10.71mm

Typical Gate Charge @ Vgs

28 nC @ 10 V

Width

4.93mm

Transistor Material

Si

Number of Elements per Chip

1

Height

16.13mm

Forward Diode Voltage

1.4V

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

Super Junction (SJ) MOSFET

These MOSFET use MagnaChip's Super Junction technology to provide low on-resistance and gate charge. They are highly efficient through the use of optimised charge coupling technology.

MOSFET Transistors, MagnaChip

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N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220F MagnaChip MMF60R360PTH
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P.O.A.

N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-220F MagnaChip MMF60R360PTH
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

360 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

31 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

10.71mm

Typical Gate Charge @ Vgs

28 nC @ 10 V

Width

4.93mm

Transistor Material

Si

Number of Elements per Chip

1

Height

16.13mm

Forward Diode Voltage

1.4V

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

Super Junction (SJ) MOSFET

These MOSFET use MagnaChip's Super Junction technology to provide low on-resistance and gate charge. They are highly efficient through the use of optimised charge coupling technology.

MOSFET Transistors, MagnaChip

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more