Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
MicrochipProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
295A
Maximum Drain Source Voltage Vds
3300V
Series
mSiC
Mount Type
Heatsink
Channel Mode
Enhancement Mode
Maximum Power Dissipation Pd
1918W
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Transistor Configuration
Half Bridge
Standards/Approvals
RoHS
Automotive Standard
No
Λεπτομέρειες Προϊόντος
The Microchip silicon carbide power module is a phase leg solution designed for high-voltage, high-current applications, leveraging Silicon Carbide technology for superior performance and reliability.
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
€ 1.414,73
€ 1.414,73 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 1.754,27
€ 1.754,27 Μονάδας Με Φ.Π.Α
1
€ 1.414,73
€ 1.414,73 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 1.754,27
€ 1.754,27 Μονάδας Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
1
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
MicrochipProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
295A
Maximum Drain Source Voltage Vds
3300V
Series
mSiC
Mount Type
Heatsink
Channel Mode
Enhancement Mode
Maximum Power Dissipation Pd
1918W
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Transistor Configuration
Half Bridge
Standards/Approvals
RoHS
Automotive Standard
No
Λεπτομέρειες Προϊόντος
The Microchip silicon carbide power module is a phase leg solution designed for high-voltage, high-current applications, leveraging Silicon Carbide technology for superior performance and reliability.