Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
MicrochipProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
151A
Maximum Drain Source Voltage Vds
3300V
Series
mSiC
Mount Type
Heatsink
Channel Mode
Enhancement Mode
Minimum Operating Temperature
-40°C
Maximum Power Dissipation Pd
1013W
Maximum Operating Temperature
175°C
Transistor Configuration
Half Bridge
Standards/Approvals
RoHS
Automotive Standard
No
Λεπτομέρειες Προϊόντος
The Microchip silicon carbide power module offers a phase leg configuration to effectively control high-voltage power applications through superior efficiency and reliability.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
€ 889,43
€ 889,43 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 1.102,89
€ 1.102,89 Μονάδας Με Φ.Π.Α
1
€ 889,43
€ 889,43 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 1.102,89
€ 1.102,89 Μονάδας Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
MicrochipProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
151A
Maximum Drain Source Voltage Vds
3300V
Series
mSiC
Mount Type
Heatsink
Channel Mode
Enhancement Mode
Minimum Operating Temperature
-40°C
Maximum Power Dissipation Pd
1013W
Maximum Operating Temperature
175°C
Transistor Configuration
Half Bridge
Standards/Approvals
RoHS
Automotive Standard
No
Λεπτομέρειες Προϊόντος
The Microchip silicon carbide power module offers a phase leg configuration to effectively control high-voltage power applications through superior efficiency and reliability.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
