Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
MicrochipProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
295A
Maximum Drain Source Voltage Vds
3300V
Series
mSiC
Mount Type
Heatsink
Channel Mode
Enhancement Mode
Maximum Power Dissipation Pd
1918W
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Transistor Configuration
Half Bridge
Standards/Approvals
RoHS
Automotive Standard
No
Λεπτομέρειες Προϊόντος
The Microchip silicon carbide power module combines dual common source functionality with high voltage capabilities, designed for efficient operation and superior performance in demanding applications.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
€ 1.732,74
€ 1.732,74 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 2.148,60
€ 2.148,60 Μονάδας Με Φ.Π.Α
1
€ 1.732,74
€ 1.732,74 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 2.148,60
€ 2.148,60 Μονάδας Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
MicrochipProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
295A
Maximum Drain Source Voltage Vds
3300V
Series
mSiC
Mount Type
Heatsink
Channel Mode
Enhancement Mode
Maximum Power Dissipation Pd
1918W
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Transistor Configuration
Half Bridge
Standards/Approvals
RoHS
Automotive Standard
No
Λεπτομέρειες Προϊόντος
The Microchip silicon carbide power module combines dual common source functionality with high voltage capabilities, designed for efficient operation and superior performance in demanding applications.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
